DMBT2222A discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 75 v collector-emitter voltage vceo 40 v emitter-base voltage vebo 6 v collector current ic 600 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 75 - - v ic=10ma collector-emitter breakdown voltage bvceo 40 - - v ic=10ma emitter-base breakdown volatge bvebo 5 - - v ie=10ma collector cutoff current icbo - - 10 na vcb =60v icex - - 10 na vce =60v, v eb(off)=3v emitter cutoff current iebo - - 10 na veb =3v collector-emitter saturation voltage (1) vce(sat)1 - - 0.5 v ic=380ma, ib=10ma vce(sat)2 - - 1.0 v ic=500ma, ib=50ma base-emitter saturation voltage (1) vbe(sat)1 - - 1.2 v ic=150ma, ib=15ma vbe(sat)2 - - 2.0 v ic=500ma, ib=50ma hfe1 35 - - - ic=0.1ma, vce=10v hfe2 50 - - - ic=1ma, vce=10v dc current gain(1) hfe3 75 - - - ic=10ma, vce=10v hfe4 100 - 300 - ic=150ma, vce=10v hfe5 40 - - - ic=500ma, vce=10v transition frequency ft 300 - - mhz ic=20ma, vce =20v, f=100mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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